Ultrabright and stable top-emitting quantum-dot light-emitting diodes with negligible angular color shift
Mengqi Li1, Rui Li1, Longjia Wu2, Xiongfeng Lin1, Xueqing Xia1, Zitong Ao2, Xiaojuan Sun1, Xingtong Chen1 , Song Chen1,3*（陈崧）
1Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 Jiangsu, China.
2TCL Corporate Research, 1001 Zhongshan Park Road, Nanshan District, Shenzhen 518067 Guangdong, China.
3Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123 Jiangsu, China.
Nat. Commun. , 2024, 15, 5161
Abstract: Top emission can enhance luminance, color purity, and panel-manufacturing compatibility for emissive displays. Still, top-emitting quantum-dot light-emitting diodes (QLEDs) suffer from poor stability, low light outcoupling, and non-negligible viewing-angle dependence because, for QLEDs with non-red emission, the electrically optimum device structure is incompatible with single-mode optical microcavity. Here, we demonstrate that by improving the way of determining reflection penetration depths and creating refractive-index-lowering processes, the issues faced by green QLEDs can be overcome. This leads to advanced device performance, including a luminance exceeding 1.6 million nits, a current efficiency of 204.2 cd A−1, and a T95 operational lifetime of 15,600 hours at 1000 nits. Meanwhile, our design does not compromise light outcoupling as it offers an external quantum efficiency of 29.2% without implementing light extraction methods. Lastly, an angular color shift of Δu’v’ = 0.0052 from 0° to 60° is achieved by narrowing the emission linewidth of quantum dots.
链接：//www.nature.com/articles/s41467-024-49574-6
