Liu Q1, Dong H2, Li Y2, Li H1, Chen D1, Wang L1, Xu Q*1（徐庆锋）, Lu J*1（路建美）
1 College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University
2Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Chem Asian J. ,2016 ,11(4):512-519
Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.
链接：//www.ncbi.nlm.nih.gov/pubmed/26530289
