Adjusting the Proportion of Electron-Withdrawing Groups in a Graft Functional Polymer for Multilevel Memory Performance
Wu, LX ; Wang, P; Zhang, CY ; He, JH ; Chen, DY ; Jun, J ; Xu, QF*(徐庆锋) ; Lu, JM*（路建美）
Soochow Univ, Coll Chem Chem Engn & Mat Sci, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China
CHEMISTRY-AN ASIAN JOURNAL,Volume 11, Issue 1,January 5, 2016,Pages 102–111
A polymer containing aldehyde active groups (PVB) was synthesized by atom transfer radical polymerization (ATRP), acting as a polymer precursor to graft a functional moiety via nucleophilic addition reaction. DHI 2-(1,5-dimethyl-hexyl)-6-hydrazino-benzo[de]isoquinoline-1,3dione) and NPH (nitrophenyl hydrazine) groups, which contain naphthalimides that act as narrow traps and nitro groups that act as deep traps, were anchored onto the PVB at different ratios. A series of graft polymers were obtained and named PVB-DHI, PVB-DHI4-NPH, PVB-DHI-NPH4, and PVB-NPH. The chemical composition of the polymers was analyzed by H-1-NMR spectroscopy and X-ray photoelectron spectroscopy (XPS). Memory devices were prepared from the polymers, and I-V characteristics were measured to determine the performance. By adjusting the ratio of different electron acceptors (DHI and NPH) to 4: 1, ternary memory behavior was achieved. The relationship between memory behavior of PVB-DHIxNPHy and acceptor groups as well as their conduction mechanism were studied in detail.
链接：//onlinelibrary.wiley.com/doi/10.1002/asia.201500842/full
