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 Initiator-changed memory type: preparation of end-functionalized polymers by ATRP and study of their nonvolatile memory effects

Fei-Long Ye,^ab   Cai-Jian Lu,^ab   Hong-Xia Chen,^ab   You-Hao Zhang,^ab   Na-Jun Li,^ab   Li-Hua Wang,^ab   Hua Li,^ab   Qing-Feng Xu*^ab (徐庆锋) and   Jian-Mei Lu*^ab  （路建美）

Department of Polymer Science, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, 199 Ren'ai Road, Suzhou 215123, China
^b Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments, Soochow University, 199 Ren'ai Road, Suzhou 215123, China

Polym. Chem. 2014, 5, 752-760

 A new hydrazine naphthalimide initiator (NI) was designed and synthesized. Two end functional group polymers NPVCz-1 and NPVCz-2 were prepared by ATRP. We successfully controlled the location of the naphthalimide functional group at one end of the polymer chain. NPVCz-1 and NPVCz-2 were fabricated as films by simple spin-coating and all of them were then prepared as sandwich memory devices ITO/NPVCz-1/Al and ITO/NPVCz-2/Al respectively. According to the measurements, all devices exhibited stable binary flash-type memory effects. In addition, ITO/NPVCz-1/Al and ITO/NPVCz-2/Al exhibited different turn-on threshold voltages of about −2.5 and −1.5 V respectively. It illustrated that NPVCz-2 possessing a larger molecular weight shows lower turn-on threshold voltage due to the lower hole injection barrier, which was related to low-power consumption.

链接：//pubs.rsc.org/en/content/articlelanding/2014/py/c3py00950e#!divAbstract