报告题目：Gas phase and Wire Surface Chemistry in Hot-wire Chemical Vapor Deposition using Organosilicon Precursors
报告人：YuJun Shi，Associate
Professor, Department of Chemistry, University of Calgary
报告时间：6月11日上午10点30分
报告地点：701-1228 室
报告摘要：Hot-wire Chemical vapor deposition (CVD) is a useful technique to form silicon-containing semiconductors, metal oxides and polymer thin films. It utilizes the catalytic ability of metal filaments (W
or Ta) to decompose source gases to radicals at high temperatures (≥1500°C). The radical-radical and radical-molecule reactions in the gas phase produce the final mix of film growth precursors which react with the substrate at a relatively low temperature (~300°C) for film formation. Understanding the reaction chemistry in the gas phase and on the wire surface plays a crucial role in developing a comprehensive deposition model for a rational optimization of the process. In this seminar, our studies of gas-phase reaction chemistry when using open-chain alkylsilane and four-membered-ring (di)silacyclobutane as single-source organosilicon precursors for silicon carbide formation will be presented. Laser ionization mass spectrometry, chemical rapping, and high-level ab initio theoretical calculations are used to unravel the reaction chemistry. In addition, the formation of metal alloys on the wire surface will be described. An integrated knowledge of different processes, including tungsten silicide/carbide formation, the Si/C diffusion, and Si/C evaporation, is needed to understand the wire surface chemistry.
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